Considerably long carrier lifetimes in high-quality 3C-SiC(111)
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AC Hot Carrier Transport in 3C{ and 6H{SiC in the Terahertz Frequency and High Lattice Temperature Regime
The complex mobility of electrons in 3C{ and 6H{SiC subjected to intense high frequency electric elds is calculated taking into account e ects of band nonparabolicity. The electric eld, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteris...
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تاریخ انتشار 2012